2N6045G PÅ
Tillgänglig
2N6045G PÅ
Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • These Devices are Pb−Free and are RoHS Compliant*
Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • These Devices are Pb−Free and are RoHS Compliant*
Please make sure your contact information is correct. Your message will be sent directly to the recipient(s) and will not be publicly displayed. We will never distribute or sell your personal information to third parties without your express permission.
